IXFT4N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Number of Channels :

1 Channel

Power Dissipation-Max :

150W Tc

Pulsed Drain Current-Max (IDM) :

16A

Number of Terminations :

2

Lead Free :

Lead Free

Channel Mode :

Enhancement

Turn-Off Delay Time :

32 ns

Drain to Source Breakdown Voltage :

1kV

Length :

16.05 mm

Terminal Finish :

Matte Tin (Sn)

Number of Terminals :

2

Configuration :

Single

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Published :

2000

Power Dissipation-Max (Abs) :

150 W

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

3Ohm

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXFT4

Terminal Position :

Single

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Case Connection :

DRAIN

JESD-609 Code :

e3

Maximum Operating Temperature :

+ 150 C

DS Breakdown Voltage-Min :

1000 V

Drain Current-Max (Abs) (ID) :

4A

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Product Status :

Obsolete

Mounting Type :

Surface Mount

FET Feature :

--

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Height :

5.1 mm

Gate to Source Voltage (Vgs) :

20V

Product Category :

MOSFET

Width :

14 mm

Number of Pins :

3

Transistor Polarity :

N-Channel

Brand :

IXYS

Supplier Device Package :

TO-268

Additional Feature :

AVALANCHE RATED

Mount :

Surface Mount

JEDEC-95 Code :

TO-268AA

Continuous Drain Current (ID) :

4A

Power Dissipation (Max) :

150W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Product Type :

MOSFET

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

5V @ 1.5mA

Avalanche Energy Rating (Eas) :

700 mJ

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HiPerFET™

Fall Time (Typ) :

18 ns

Transistor Type :

1 N-Channel

Pin Count :

4

Rise Time :

15ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

150W

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Drain to Source Voltage (Vdss) :

1000V

Tradename :

HiPerFET

Mounting Style :

SMD/SMT

Element Configuration :

Single