IXFT44N50Q3
- Mfr.Part #
- IXFT44N50Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO268
- Stock
- 9,718
- In Stock :
- 9,718
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 830W (Tc)
- Element Configuration :
- Single
- Length :
- 16.05mm
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 130 A
- Number of Terminals :
- 2
- Turn-Off Delay Time :
- 37 ns
- DS Breakdown Voltage-Min :
- 500 V
- Rise Time :
- 250ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.14Ohm
- Vgs (Max) :
- ±30V
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-268AA
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Width :
- 14mm
- Tradename :
- HiPerFET
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- Published :
- 2011
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 830W Tc
- Factory Lead Time :
- 26 Weeks
- Mounting Style :
- SMD/SMT
- Surface Mount :
- yes
- Pin Count :
- 4
- Product Category :
- MOSFET
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Series :
- HiPerFET™
- Terminal Form :
- Gull wing
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- FET Feature :
- --
- Drain to Source Breakdown Voltage :
- 500V
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Packaging :
- Tube
- Product Status :
- Active
- Base Product Number :
- IXFT44
- Continuous Drain Current (ID) :
- 44A
- Number of Terminations :
- 2
- Manufacturer :
- IXYS
- Height :
- 5.1mm
- JESD-30 Code :
- R-PSSO-G2
- Product Type :
- MOSFET
- Reach Compliance Code :
- Unknown
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 44 A
- Supplier Device Package :
- TO-268
- Turn On Delay Time :
- 30 ns
- Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 6.5V @ 4mA
- Power Dissipation :
- 830W
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max (Abs) :
- 0.83 W
- Datasheets
- IXFT44N50Q3

N-Channel Tube 140m Ω @ 22A, 10V ±30V 4800pF @ 25V 93nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT44N50Q3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 44 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 37 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 130 A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFT44N50Q3 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 130 A.
a 500V drain to source voltage (Vdss)
IXFT44N50Q3 Applications
There are a lot of IXYS
IXFT44N50Q3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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