IXFT44N50Q3

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Mfr.Part #
IXFT44N50Q3
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO268
Stock
9,718
In Stock :
9,718

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Power Dissipation (Max) :
830W (Tc)
Element Configuration :
Single
Length :
16.05mm
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Elements :
1
FET Type :
N-Channel
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
130 A
Number of Terminals :
2
Turn-Off Delay Time :
37 ns
DS Breakdown Voltage-Min :
500 V
Rise Time :
250ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.14Ohm
Vgs (Max) :
±30V
Terminal Finish :
Matte Tin (Sn)
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-268AA
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
44A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Width :
14mm
Tradename :
HiPerFET
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Published :
2011
Avalanche Energy Rating (Eas) :
1500 mJ
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Power Dissipation-Max :
830W Tc
Factory Lead Time :
26 Weeks
Mounting Style :
SMD/SMT
Surface Mount :
yes
Pin Count :
4
Product Category :
MOSFET
JESD-609 Code :
e3
Mount :
Surface Mount
Series :
HiPerFET™
Terminal Form :
Gull wing
Number of Channels :
1 Channel
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
500V
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
FET Feature :
--
Drain to Source Breakdown Voltage :
500V
Brand :
IXYS
Gate to Source Voltage (Vgs) :
30V
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Packaging :
Tube
Product Status :
Active
Base Product Number :
IXFT44
Continuous Drain Current (ID) :
44A
Number of Terminations :
2
Manufacturer :
IXYS
Height :
5.1mm
JESD-30 Code :
R-PSSO-G2
Product Type :
MOSFET
Reach Compliance Code :
Unknown
Package Shape :
RECTANGULAR
Drain Current-Max (Abs) (ID) :
44 A
Supplier Device Package :
TO-268
Turn On Delay Time :
30 ns
Configuration :
Single
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Power Dissipation :
830W
Transistor Type :
1 N-Channel
Power Dissipation-Max (Abs) :
0.83 W
Datasheets
IXFT44N50Q3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT44N50Q3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:2, IXFT44N50Q3 pinout, IXFT44N50Q3 datasheet PDF, IXFT44N50Q3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT44N50Q3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT44N50Q3


N-Channel Tube 140m Ω @ 22A, 10V ±30V 4800pF @ 25V 93nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT44N50Q3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 44 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 37 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 130 A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFT44N50Q3 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 130 A.
a 500V drain to source voltage (Vdss)


IXFT44N50Q3 Applications


There are a lot of IXYS
IXFT44N50Q3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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