IXFT44N50P

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Mfr.Part #
IXFT44N50P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO268
Stock
23,159
In Stock :
23,159

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
not_compliant
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
5440pF @ 25V
Power Dissipation (Max) :
658W (Tc)
Gate to Source Voltage (Vgs) :
30V
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5V @ 4mA
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
44A
Published :
2006
Package :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current :
44A
Rise Time :
29ns
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
110 A
Terminal Position :
Single
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-268AA
Subcategory :
MOSFETs
Power Dissipation-Max :
658W Tc
Drain to Source Breakdown Voltage :
500V
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
4
Height :
5.1 mm
Product Type :
MOSFET
Voltage - Rated DC :
500V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Base Product Number :
IXFT44
Mounting Style :
SMD/SMT
JESD-30 Code :
R-PSSO-G2
Voltage :
500V
Brand :
IXYS
Supplier Device Package :
TO-268
Drain to Source Voltage (Vdss) :
500V
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Length :
16.05 mm
JESD-609 Code :
e3
Power Dissipation :
650W
Terminal Form :
Gull wing
Lead Free :
Lead Free
Packaging :
Tube
Current Rating :
44A
FET Type :
N-Channel
Tradename :
HiPerFET
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
85 ns
Number of Terminals :
2
Surface Mount :
yes
Configuration :
Single
Width :
14 mm
Terminal Finish :
Matte Tin (Sn)
FET Feature :
--
Case Connection :
DRAIN
Series :
HiPerFET™, PolarHT™
Pbfree Code :
yes
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
27 ns
Avalanche Energy Rating (Eas) :
1700 mJ
Factory Lead Time :
26 Weeks
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
500 V
RoHS :
Details
Number of Pins :
3
Qualification Status :
Not Qualified
Element Configuration :
Single
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Product Status :
Active
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.14Ohm
Manufacturer :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXFT44N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT44N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Voltage:500V, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IXFT44N50P pinout, IXFT44N50P datasheet PDF, IXFT44N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT44N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT44N50P


N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT44N50P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1700 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 110 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFT44N50P Features


the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110 A.
a 500V drain to source voltage (Vdss)


IXFT44N50P Applications


There are a lot of IXYS
IXFT44N50P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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