IXFT42N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Terminal Form :

Gull wing

Packaging :

Tube

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Polarity/Channel Type :

N-Channel

Drain to Source Resistance :

145 mΩ

Continuous Drain Current (ID) :

42A

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Supplier Device Package :

TO-268

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Channel Mode :

Enhancement

Input Capacitance :

5.3 nF

Min Operating Temperature :

-55 °C

Pin Count :

4

Power Dissipation (Max) :

830W (Tc)

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

145m Ω @ 500mA, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Maximum Operating Temperature :

+ 150 C

DS Breakdown Voltage-Min :

500 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2011

Base Product Number :

IXFT42

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Vgs (Max) :

±30V

Surface Mount :

yes

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Series :

HiPerFET™, PolarHV™

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

FET Type :

N-Channel

Product Type :

MOSFET

FET Feature :

--

Transistor Type :

1 N-Channel

Mount :

Surface Mount

Factory Lead Time :

20 Weeks

Package Shape :

RECTANGULAR

Power Dissipation :

830W

Number of Terminals :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Brand :

IXYS

Number of Terminations :

2

Max Power Dissipation :

830 W

Pbfree Code :

yes

Rds On Max :

145 mΩ

JESD-609 Code :

e3

Manufacturer :

IXYS

RoHS :

Details

Power Dissipation-Max (Abs) :

830 W

Tradename :

HiPerFET

Transistor Application :

SWITCHING

Type :

PolarP2 HiperFET Power MOSFET

Drain-source On Resistance-Max :

0.145Ohm

Power Dissipation-Max :

830W Tc

Drain to Source Breakdown Voltage :

500V

Lead Free :

Lead Free

JEDEC-95 Code :

TO-268AA

Max Operating Temperature :

150 °C

Package :

Tube

Configuration :

Single

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

42 A

Avalanche Energy Rating (Eas) :

1400 mJ

Pulsed Drain Current-Max (IDM) :

126A