IXFT40N50Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Published :

2003

Channel Mode :

Enhancement

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

40A

Surface Mount :

yes

Power Dissipation-Max :

500W Tc

Turn-Off Delay Time :

56 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Base Product Number :

IXFT40

JEDEC-95 Code :

TO-268AA

Subcategory :

MOSFETs

Pin Count :

4

Power Dissipation (Max) :

500W (Tc)

Packaging :

Bulk

DS Breakdown Voltage-Min :

500 V

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Box

Drain-source On Resistance-Max :

0.14Ohm

Configuration :

Single

Mount :

Surface Mount

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

2 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Product Category :

MOSFET

Power Dissipation :

500W

Manufacturer :

IXYS

Pulsed Drain Current-Max (IDM) :

160A

Brand :

IXYS

Number of Terminals :

2

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Number of Elements :

1

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Transistor Type :

1 N-Channel

Product Status :

Active

Rise Time :

20ns

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Mounting Style :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Terminal Form :

Gull wing

Height :

5.1 mm

Supplier Device Package :

TO-268

JESD-609 Code :

e3

Length :

16.05 mm

Gate to Source Voltage (Vgs) :

30V

Width :

14 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

500V

Rds On (Max) @ Id, Vgs :

140m Ω @ 500mA, 10V

Fall Time (Typ) :

14 ns

Mounting Type :

Surface Mount

FET Feature :

--

Transistor Application :

SWITCHING

FET Type :

N-Channel

Terminal Position :

Single

Number of Channels :

1 Channel

Element Configuration :

Single