IXFT40N30Q
- Mfr.Part #
- IXFT40N30Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 40A TO268
- Stock
- 22,257
- In Stock :
- 22,257
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 25V
- Base Product Number :
- IXFT40
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Radiation Hardening :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Voltage (Vdss) :
- 300V
- Case Connection :
- DRAIN
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 300W Tc
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- DS Breakdown Voltage-Min :
- 300 V
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Pin Count :
- 4
- Drain Current-Max (Abs) (ID) :
- 40 A
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS Corporation
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 12 ns
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 500mA, 10V
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Rise Time :
- 35ns
- Mounting Type :
- Surface Mount
- Current Rating :
- 40A
- Product Status :
- Obsolete
- Polarity/Channel Type :
- N-Channel
- Mount :
- Surface Mount
- Surface Mount :
- yes
- Voltage - Rated DC :
- 300V
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.085 Ω
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 160 A
- FET Type :
- N-Channel
- Resistance :
- 80mOhm
- Packaging :
- Tube
- Supplier Device Package :
- TO-268
- Power Dissipation :
- 300W
- FET Feature :
- --
- Series :
- HiPerFET™
- JESD-609 Code :
- e3
- Published :
- 2011
- Number of Terminations :
- 2
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-268
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 300W (Tc)
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max (Abs) :
- 300 W
- Drain to Source Breakdown Voltage :
- 300V
- Turn-Off Delay Time :
- 40 ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Continuous Drain Current (ID) :
- 40A
- Datasheets
- IXFT40N30Q

N-Channel Tube 80m Ω @ 500mA, 10V ±20V 3100pF @ 25V 140nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT40N30Q Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3100pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 40 A.When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 160 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFT40N30Q Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 160 A.
a 300V drain to source voltage (Vdss)
IXFT40N30Q Applications
There are a lot of IXYS
IXFT40N30Q applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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