IXFT40N30Q

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Mfr.Part #
IXFT40N30Q
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 300V 40A TO268
Stock
22,257
In Stock :
22,257

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
3100pF @ 25V
Base Product Number :
IXFT40
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Radiation Hardening :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Finish :
Matte Tin (Sn)
Drain to Source Voltage (Vdss) :
300V
Case Connection :
DRAIN
Package :
Tube
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
300W Tc
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
DS Breakdown Voltage-Min :
300 V
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Lead Free :
Lead Free
Package Shape :
RECTANGULAR
Pin Count :
4
Drain Current-Max (Abs) (ID) :
40 A
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS Corporation
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Fall Time (Typ) :
12 ns
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
80m Ω @ 500mA, 10V
RoHS Status :
RoHS Compliant
Reach Compliance Code :
not_compliant
Number of Elements :
1
Rise Time :
35ns
Mounting Type :
Surface Mount
Current Rating :
40A
Product Status :
Obsolete
Polarity/Channel Type :
N-Channel
Mount :
Surface Mount
Surface Mount :
yes
Voltage - Rated DC :
300V
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.085 Ω
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
160 A
FET Type :
N-Channel
Resistance :
80mOhm
Packaging :
Tube
Supplier Device Package :
TO-268
Power Dissipation :
300W
FET Feature :
--
Series :
HiPerFET™
JESD-609 Code :
e3
Published :
2011
Number of Terminations :
2
Number of Terminals :
2
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
JEDEC-95 Code :
TO-268
Transistor Application :
SWITCHING
Power Dissipation (Max) :
300W (Tc)
Vgs(th) (Max) @ Id :
4V @ 4mA
Element Configuration :
Single
Terminal Form :
Gull wing
JESD-30 Code :
R-PSSO-G2
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
300 W
Drain to Source Breakdown Voltage :
300V
Turn-Off Delay Time :
40 ns
Avalanche Energy Rating (Eas) :
1000 mJ
Continuous Drain Current (ID) :
40A
Datasheets
IXFT40N30Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT40N30Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, IXFT40N30Q pinout, IXFT40N30Q datasheet PDF, IXFT40N30Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT40N30Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT40N30Q


N-Channel Tube 80m Ω @ 500mA, 10V ±20V 3100pF @ 25V 140nC @ 10V 300V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT40N30Q Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3100pF @ 25V.This device conducts a continuous drain current (ID) of 40A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 40 A.When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 160 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFT40N30Q Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 160 A.
a 300V drain to source voltage (Vdss)


IXFT40N30Q Applications


There are a lot of IXYS
IXFT40N30Q applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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