IXFT400N075T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXFT400

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Case Connection :

DRAIN

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 175 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

75V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

400A Tc

Gate Charge (Qg) (Max) @ Vgs :

420nC @ 10V

Continuous Drain Current (ID) :

400A

Mounting Style :

SMD/SMT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Manufacturer :

IXYS

Product Type :

MOSFET

Transistor Application :

SWITCHING

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0023Ohm

Mounting Type :

Surface Mount

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Power Dissipation (Max) :

1000W (Tc)

Packaging :

Tube

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Number of Terminals :

2

Pulsed Drain Current-Max (IDM) :

1000A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-268

Channel Mode :

Enhancement

Reach Compliance Code :

not_compliant

Series :

GigaMOS™, HiPerFET™, TrenchT2™

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

1000 W

Transistor Element Material :

SILICON

RoHS :

Details

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Tube

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Package Shape :

RECTANGULAR

Tradename :

HiPerFET

Input Capacitance (Ciss) (Max) @ Vds :

24000pF @ 25V

Drain Current-Max (Abs) (ID) :

400 A

Factory Lead Time :

26 Weeks

Number of Terminations :

2

Brand :

IXYS

DS Breakdown Voltage-Min :

75V

Mount :

Surface Mount

Pin Count :

4

Power Dissipation-Max :

1000W Tc

Published :

2009

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

1500 mJ

JEDEC-95 Code :

TO-268AA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Transistor Polarity :

N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V