IXFT36N60P

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Mfr.Part #
IXFT36N60P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 600V 36A TO268
Stock
23,525
In Stock :
23,525

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
16.05 mm
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
600V
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
600 V
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn)
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
102nC @ 10V
Rise Time :
25ns
Terminal Form :
Gull wing
Drain to Source Breakdown Voltage :
600V
Gate to Source Voltage (Vgs) :
30V
Subcategory :
MOSFETs
Manufacturer :
IXYS
Surface Mount :
yes
Lead Free :
Lead Free
Turn-Off Delay Time :
80 ns
Number of Pins :
3
Vgs (Max) :
±30V
Supplier Device Package :
TO-268
Voltage - Rated DC :
600V
Series :
HiPerFET™, PolarHT™
RoHS :
Details
Number of Terminals :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Pin Count :
4
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Pbfree Code :
yes
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
80A
Package Shape :
RECTANGULAR
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
190m Ω @ 18A, 10V
Mounting Style :
SMD/SMT
Product Type :
MOSFET
FET Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2006
Mounting Type :
Surface Mount
Current Rating :
36A
Threshold Voltage :
5V
Power Dissipation (Max) :
650W (Tc)
Power Dissipation :
650W
Base Product Number :
IXFT36
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Continuous Drain Current (ID) :
36A
FET Feature :
--
Number of Terminations :
2
Channel Mode :
Enhancement
Tradename :
HiPerFET
Reach Compliance Code :
not_compliant
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Drain-source On Resistance-Max :
0.19Ohm
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation-Max :
650W Tc
Terminal Position :
Single
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Brand :
IXYS
Type :
PolarHV HiPerFET Power MOSFET
Height :
5.1 mm
Fall Time (Typ) :
22 ns
Width :
14 mm
Product Category :
MOSFET
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
1500 mJ
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Case Connection :
DRAIN
REACH SVHC :
No SVHC
JEDEC-95 Code :
TO-268AA
Datasheets
IXFT36N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT36N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Type:PolarHV HiPerFET Power MOSFET, IXFT36N60P pinout, IXFT36N60P datasheet PDF, IXFT36N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT36N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT36N60P


N-Channel Tube 190m Ω @ 18A, 10V ±30V 5800pF @ 25V 102nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT36N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 5800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFT36N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IXFT36N60P Applications


There are a lot of IXYS
IXFT36N60P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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