IXFT36N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Terminal Form :

Gull wing

Height :

5.1 mm

DS Breakdown Voltage-Min :

500 V

Power Dissipation-Max :

540W Tc

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Turn-Off Delay Time :

75 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

RoHS :

Details

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

90A

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSSO-G2

Width :

14 mm

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Package :

Tube

Drain Current-Max (Abs) (ID) :

36 A

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Number of Elements :

1

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

500V

Element Configuration :

Single

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Threshold Voltage :

5V

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Length :

16.05 mm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

FET Type :

N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Mounting Style :

SMD/SMT

REACH SVHC :

No SVHC

FET Feature :

--

Rise Time :

27ns

Series :

HiPerFET™, PolarP2™

Number of Channels :

1 Channel

Number of Terminals :

2

Supplier Device Package :

TO-268

Published :

2006

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

540W

Packaging :

Tube

Product Status :

Active

Tradename :

HiPerFET

Reach Compliance Code :

Unknown

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max (Abs) :

540 W

Voltage - Rated DC :

500V

Rds On (Max) @ Id, Vgs :

170m Ω @ 500mA, 10V

Drain-source On Resistance-Max :

0.17Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

1500 mJ

Pin Count :

4

Transistor Application :

SWITCHING

Fall Time (Typ) :

21 ns

Terminal Position :

Single

Configuration :

Single

Brand :

IXYS

Vgs(th) (Max) @ Id :

5V @ 4mA

Product Category :

MOSFET

Continuous Drain Current (ID) :

36A

Vgs (Max) :

±30V

Factory Lead Time :

33 Weeks

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-268AA

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Pbfree Code :

yes

Base Product Number :

IXFT36

Current Rating :

36A

Power Dissipation (Max) :

540W (Tc)