IXFT32N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

360W (Tc)

Reach Compliance Code :

not_compliant

Number of Terminals :

2

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 25V

Package :

Tube

Turn-Off Delay Time :

110 ns

Fall Time (Typ) :

26 ns

FET Type :

N-Channel

Published :

2000

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Series :

HiPerFET™

DS Breakdown Voltage-Min :

500 V

Base Product Number :

IXFT32

Vgs(th) (Max) @ Id :

4V @ 4mA

Lead Free :

Lead Free

Product Status :

Obsolete

Gate to Source Voltage (Vgs) :

20V

Rise Time :

42ns

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Terminations :

2

Terminal Form :

Gull wing

Pbfree Code :

yes

Mounting Type :

Surface Mount

Manufacturer :

IXYS Corporation

Packaging :

Tube

JEDEC-95 Code :

TO-268

JESD-609 Code :

e3

Continuous Drain Current (ID) :

32A

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Power Dissipation :

360W

Number of Elements :

1

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

1500 mJ

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

500V

Power Dissipation-Max (Abs) :

360 W

Supplier Device Package :

TO-268

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Rds On (Max) @ Id, Vgs :

150m Ω @ 15A, 10V

Drain Current-Max (Abs) (ID) :

32 A

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

500V

Power Dissipation-Max :

360W Tc

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

128A

Surface Mount :

yes

Drain-source On Resistance-Max :

0.15Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR