IXFT320N10T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Power Dissipation-Max (Abs) :

1000 W

Packaging :

Tube

Transistor Polarity :

N-Channel

Lead Free :

Lead Free

Product Type :

MOSFET

Package Shape :

RECTANGULAR

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-268AA

JESD-30 Code :

R-PSSO-G2

Brand :

IXYS

Factory Lead Time :

26 Weeks

Drain-source On Resistance-Max :

0.0035 Ω

Transistor Element Material :

SILICON

RoHS :

Details

Length :

16.05 mm

Terminal Finish :

PURE TIN

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Channels :

1 Channel

Series :

GigaMOS™, HiPerFET™, TrenchT2™

JESD-609 Code :

e3

Base Product Number :

IXFT320

Channel Mode :

Enhancement

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Reach Compliance Code :

Unknown

Width :

14 mm

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

320A

Drain Current-Max (Abs) (ID) :

320 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Avalanche Energy Rating (Eas) :

1500 mJ

Input Capacitance (Ciss) (Max) @ Vds :

26000pF @ 25V

Case Connection :

DRAIN

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

100V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

320A Tc

Operating Temperature :

-55°C~175°C TJ

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Tradename :

HiPerFET

Power Dissipation-Max :

1000W Tc

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Elements :

1

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

1000W (Tc)

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 100A, 10V

Mounting Style :

SMD/SMT

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

430nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Maximum Operating Temperature :

+ 175 C

FET Feature :

--

Supplier Device Package :

TO-268

Pin Count :

4

Manufacturer :

IXYS

Type :

TrenchT2 HiperFET Power MOSFET

Pulsed Drain Current-Max (IDM) :

800A

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Number of Pins :

3

Rise Time :

46 ns

Height :

5.1 mm

Number of Terminals :

2