IXFT30N60Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

IXYS

Package Shape :

RECTANGULAR

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Max Power Dissipation :

500 W

Pulsed Drain Current-Max (IDM) :

120A

DS Breakdown Voltage-Min :

600 V

Minimum Operating Temperature :

- 55 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Polarity :

N-Channel

Configuration :

Single

Width :

14 mm

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

230m Ω @ 500mA, 10V

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Power Dissipation (Max) :

500W (Tc)

FET Feature :

--

Rise Time :

32ns

Package :

Box

Fall Time (Typ) :

16 ns

Avalanche Energy Rating (Eas) :

1500 mJ

FET Type :

N-Channel

JEDEC-95 Code :

TO-268AA

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Subcategory :

MOSFETs

Published :

2003

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Drain to Source Voltage (Vdss) :

600V

Supplier Device Package :

TO-268

Element Configuration :

Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Rds On Max :

230 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

5.1 mm

Drain to Source Breakdown Voltage :

600V

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

Length :

16.05 mm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Power Dissipation :

500W

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Max Operating Temperature :

150 °C

Series :

HiPerFET™

Surface Mount :

yes

Drain to Source Resistance :

230 mΩ

Factory Lead Time :

8 Weeks

Pin Count :

4

Mounting Type :

Surface Mount

Pbfree Code :

yes

JESD-609 Code :

e3

Base Product Number :

IXFT30

Terminal Finish :

Matte Tin (Sn)

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.23Ohm

Vgs (Max) :

±20V

Channel Mode :

Enhancement

Gate to Source Voltage (Vgs) :

20V

Packaging :

Bulk

Input Capacitance :

4.7 nF

Continuous Drain Current (ID) :

30A

RoHS :

Compliant

Turn-Off Delay Time :

80 ns

Number of Terminals :

2

Power Dissipation-Max :

500W Tc

Transistor Element Material :

SILICON

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Mounting Style :

SMD/SMT

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Number of Channels :

1 Channel

Min Operating Temperature :

-55 °C