IXFT30N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Reach Compliance Code :

not_compliant

Length :

16.05 mm

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

25 ns

Turn-Off Delay Time :

80 ns

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Drain to Source Voltage (Vdss) :

600V

Package :

Tube

JESD-609 Code :

e3

Number of Pins :

3

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

80A

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Power Dissipation (Max) :

500W (Tc)

Power Dissipation-Max :

500W Tc

Package Shape :

RECTANGULAR

Brand :

IXYS

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Series :

HiPerFET™, PolarHT™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

240m Ω @ 15A, 10V

Product Category :

MOSFET

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

30V

Number of Terminals :

2

Continuous Drain Current (ID) :

30A

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-268

Rise Time :

20ns

Subcategory :

MOSFETs

Product Status :

Active

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

600V

FET Type :

N-Channel

Tradename :

HiPerFET

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Published :

2006

Drain-source On Resistance-Max :

0.24Ohm

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

5V @ 4mA

Current Rating :

30A

Number of Elements :

1

Height :

5.1 mm

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

JEDEC-95 Code :

TO-268AA

Transistor Application :

SWITCHING

Power Dissipation :

500W

FET Feature :

--

Drain to Source Breakdown Voltage :

600V

Additional Feature :

AVALANCHE RATED

Number of Terminations :

2

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

600 V

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

1500 mJ

Configuration :

Single

Surface Mount :

yes

Channel Mode :

Enhancement

Manufacturer :

IXYS

Factory Lead Time :

24 Weeks

Mounting Style :

SMD/SMT

Width :

14 mm

Base Product Number :

IXFT30

RoHS :

Details

Transistor Polarity :

N-Channel

Pin Count :

4