IXFT30N50Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSSO-G2

Width :

14mm

Power Dissipation-Max (Abs) :

690 W

Supplier Device Package :

TO-268

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

500V

Turn-Off Delay Time :

26 ns

Pulsed Drain Current-Max (IDM) :

90A

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Continuous Drain Current (ID) :

30A

Power Dissipation :

690W

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Tradename :

HiPerFET

Package :

Tube

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Rds On (Max) @ Id, Vgs :

200m Ω @ 15A, 10V

Height :

5.1mm

Number of Pins :

3

Drain-source On Resistance-Max :

0.2Ohm

Power Dissipation-Max :

690W Tc

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

30A Tc

DS Breakdown Voltage-Min :

500 V

Pin Count :

4

Number of Channels :

1 Channel

Package Shape :

RECTANGULAR

Terminal Position :

Single

Manufacturer :

IXYS

JEDEC-95 Code :

TO-268AA

FET Type :

N-Channel

Length :

16.05mm

Base Product Number :

IXFT30

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

1500 mJ

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Polarity/Channel Type :

N-Channel

Rise Time :

250ns

Product Status :

Active

Factory Lead Time :

26 Weeks

Minimum Operating Temperature :

- 55 C

Turn On Delay Time :

14 ns

Case Connection :

DRAIN

JESD-609 Code :

e3

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Mounting Style :

SMD/SMT

Configuration :

Single

Drain Current-Max (Abs) (ID) :

30 A

Power Dissipation (Max) :

690W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Number of Terminations :

2

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Element Configuration :

Single

Series :

HiPerFET™

Channel Mode :

Enhancement

Number of Terminals :

2

Published :

2011

Transistor Application :

SWITCHING

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

6.5V @ 4mA

RoHS :

Details

Product Category :

MOSFET

Transistor Element Material :

SILICON