IXFT30N50Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Turn-Off Delay Time :

26 ns

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

90A

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Pins :

3

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Mount :

Surface Mount

Series :

HiPerFET™

Drain Current-Max (Abs) (ID) :

30 A

Power Dissipation-Max (Abs) :

690 W

Surface Mount :

yes

Supplier Device Package :

TO-268

Rds On (Max) @ Id, Vgs :

200m Ω @ 15A, 10V

Package Shape :

RECTANGULAR

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Height :

5.1mm

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current (ID) :

30A

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Product Status :

Active

Rise Time :

250ns

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

500V

Published :

2011

Avalanche Energy Rating (Eas) :

1500 mJ

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

690W

Mounting Type :

Surface Mount

Number of Terminals :

2

FET Feature :

--

Package :

Tube

FET Type :

N-Channel

RoHS :

Details

Drain to Source Voltage (Vdss) :

500V

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Tradename :

HiPerFET

Number of Terminations :

2

Mounting Style :

SMD/SMT

Number of Elements :

1

Reach Compliance Code :

Unknown

Element Configuration :

Single

Power Dissipation (Max) :

690W (Tc)

Power Dissipation-Max :

690W Tc

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Pin Count :

4

Product Type :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Channel Mode :

Enhancement

Product Category :

MOSFET

Number of Channels :

1 Channel

Width :

14mm

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

500 V

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Case Connection :

DRAIN

Turn On Delay Time :

14 ns

Base Product Number :

IXFT30

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Drain-source On Resistance-Max :

0.2Ohm

Factory Lead Time :

26 Weeks

Packaging :

Tube

Configuration :

Single

JEDEC-95 Code :

TO-268AA

Qualification Status :

Not Qualified

Length :

16.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant