IXFT30N50P

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Mfr.Part #
IXFT30N50P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO268
Stock
4,688
In Stock :
4,688

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2006
Avalanche Energy Rating (Eas) :
1200 mJ
Maximum Operating Temperature :
+ 150 C
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Drain-source On Resistance-Max :
0.2Ohm
JEDEC-95 Code :
TO-268AA
Factory Lead Time :
26 Weeks
Product Category :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
SMD/SMT
Vgs(th) (Max) @ Id :
5V @ 4mA
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Minimum Operating Temperature :
- 55 C
Case Connection :
DRAIN
Channel Mode :
Enhancement
Packaging :
Tube
Width :
14 mm
Package Shape :
RECTANGULAR
Surface Mount :
yes
Transistor Polarity :
N-Channel
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
Gull wing
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
2
JESD-30 Code :
R-PSSO-G2
Continuous Drain Current (ID) :
30A
Power Dissipation (Max) :
460W (Tc)
Mounting Type :
Surface Mount
Transistor Type :
1 N-Channel
Power Dissipation :
460W
Number of Terminals :
2
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e3
Current Rating :
30A
Series :
HiPerFET™, PolarHT™
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
24 ns
Product Type :
MOSFET
Tradename :
HiPerFET
FET Feature :
--
DS Breakdown Voltage-Min :
500 V
Power Dissipation-Max :
460W Tc
Pbfree Code :
yes
FET Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
Configuration :
Single
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
500V
Base Product Number :
IXFT30
Element Configuration :
Single
Manufacturer :
IXYS
Brand :
IXYS
Turn-Off Delay Time :
82 ns
Transistor Application :
SWITCHING
Supplier Device Package :
TO-268
Lead Free :
Lead Free
Voltage - Rated DC :
500V
Height :
5.1 mm
Drain to Source Breakdown Voltage :
500V
Pulsed Drain Current-Max (IDM) :
75A
Rise Time :
24ns
Subcategory :
MOSFETs
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Package :
Tube
Mount :
Surface Mount
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Length :
16.05 mm
Product Status :
Active
Datasheets
IXFT30N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT30N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Terminations:2, Mounting Type:Surface Mount, Number of Channels:1 Channel, IXFT30N50P pinout, IXFT30N50P datasheet PDF, IXFT30N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT30N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT30N50P


N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT30N50P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 82 ns.Peak drain current for this device is 75A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFT30N50P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)


IXFT30N50P Applications


There are a lot of IXYS
IXFT30N50P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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