IXFT30N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Width :

14 mm

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 25V

Configuration :

Single

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HyperFET

Number of Terminations :

2

Fall Time (Typ) :

26 ns

Vgs(th) (Max) @ Id :

4V @ 4mA

JEDEC-95 Code :

TO-268

Series :

HiPerFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

500V

Transistor Type :

1 N-Channel

Surface Mount :

yes

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

RoHS Status :

ROHS3 Compliant

Number of Terminals :

2

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

30A

FET Feature :

--

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

120A

Power Dissipation :

360W

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Power Dissipation (Max) :

360W (Tc)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

160m Ω @ 15A, 10V

JESD-30 Code :

R-PSSO-G2

Base Product Number :

IXFT30

Transistor Element Material :

SILICON

Power Dissipation-Max :

360W Tc

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Length :

16.05 mm

Turn-Off Delay Time :

110 ns

Mount :

Surface Mount

Height :

5.1 mm

Package :

Tube

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

30 A

FET Type :

N-Channel

Pbfree Code :

yes

Product Status :

Active

DS Breakdown Voltage-Min :

500 V

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Number of Channels :

1 Channel

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-268

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.15Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

360 W

Rise Time :

42ns

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Pin Count :

4

Published :

2000

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Product Type :

MOSFET

Drain to Source Breakdown Voltage :

500V

Minimum Operating Temperature :

- 55 C

Avalanche Energy Rating (Eas) :

1500 mJ

Brand :

IXYS