IXFT26N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Threshold Voltage :

5V

Drain to Source Breakdown Voltage :

600V

Avalanche Energy Rating (Eas) :

1200 mJ

Pin Count :

4

Minimum Operating Temperature :

- 55 C

Terminal Finish :

Matte Tin (Sn)

Supplier Device Package :

TO-268

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

FET Type :

N-Channel

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Package Shape :

RECTANGULAR

Published :

2006

Current Rating :

26A

Pulsed Drain Current-Max (IDM) :

65A

Terminal Position :

Single

Number of Channels :

1 Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

16.05 mm

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Rds On (Max) @ Id, Vgs :

270m Ω @ 500mA, 10V

Tradename :

HiPerFET

Number of Pins :

3

Subcategory :

MOSFETs

Number of Terminals :

2

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Series :

PolarHV™

Fall Time (Typ) :

21 ns

Drain-source On Resistance-Max :

0.27Ohm

Power Dissipation (Max) :

460W (Tc)

Package :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Brand :

IXYS

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 4mA

REACH SVHC :

No SVHC

Packaging :

Tube

Transistor Polarity :

N-Channel

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXFT26

Factory Lead Time :

26 Weeks

Surface Mount :

yes

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

27ns

Gate to Source Voltage (Vgs) :

30V

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel

Width :

14 mm

Turn-Off Delay Time :

75 ns

Voltage - Rated DC :

600V

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Height :

5.1 mm

Number of Terminations :

2

FET Feature :

--

Transistor Element Material :

SILICON

Pbfree Code :

yes

Mounting Style :

SMD/SMT

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Vgs (Max) :

±30V

RoHS :

Details

Terminal Form :

Gull wing

Product Status :

Active

Drain to Source Voltage (Vdss) :

600V

JEDEC-95 Code :

TO-268AA

Product Type :

MOSFET

Lead Free :

Lead Free

Number of Elements :

1

Continuous Drain Current (ID) :

26A

Element Configuration :

Single

Product Category :

MOSFET

Power Dissipation :

460W

Power Dissipation-Max :

460W Tc

DS Breakdown Voltage-Min :

600 V