IXFT26N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Channels :

1 Channel

Product Type :

MOSFET

Terminal Finish :

Matte Tin (Sn)

Number of Terminals :

2

Series :

PolarHV™

DS Breakdown Voltage-Min :

600 V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

26A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

600V

RoHS :

Details

Product Status :

Active

REACH SVHC :

No SVHC

Package :

Tube

Mount :

Surface Mount

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-268AA

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

270m Ω @ 500mA, 10V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Turn-Off Delay Time :

75 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Factory Lead Time :

26 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 4mA

Rise Time :

27ns

FET Type :

N-Channel

Surface Mount :

yes

Power Dissipation :

460W

Pin Count :

4

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Subcategory :

MOSFETs

Vgs (Max) :

±30V

Power Dissipation-Max :

460W Tc

FET Feature :

--

Length :

16.05 mm

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Mounting Style :

SMD/SMT

Supplier Device Package :

TO-268

Base Product Number :

IXFT26

Current Rating :

26A

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Manufacturer :

IXYS

Voltage - Rated DC :

600V

Power Dissipation (Max) :

460W (Tc)

Number of Pins :

3

Number of Elements :

1

Threshold Voltage :

5V

Pulsed Drain Current-Max (IDM) :

65A

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Configuration :

Single

Fall Time (Typ) :

21 ns

Height :

5.1 mm

Transistor Element Material :

SILICON

Width :

14 mm

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Tradename :

HiPerFET

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Published :

2006

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.27Ohm

Maximum Operating Temperature :

+ 150 C

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

1200 mJ