IXFT24N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

IXYS

Width :

14 mm

Input Capacitance :

7.2 nF

Turn-Off Delay Time :

68 ns

Number of Elements :

1

Drain to Source Breakdown Voltage :

900V

Polarity/Channel Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Rds On Max :

420 mΩ

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Transistor Type :

1 N-Channel

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

900V

Product Status :

Active

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

660 W

Pin Count :

4

Avalanche Energy Rating (Eas) :

1000 mJ

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

26 Weeks

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

38 ns

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Threshold Voltage :

3.5V

Power Dissipation (Max) :

660W (Tc)

JEDEC-95 Code :

TO-268AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Operating Temperature :

150 °C

Drain to Source Resistance :

420 mΩ

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Mounting Style :

SMD/SMT

Terminal Position :

Single

Length :

16.05 mm

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

48A

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Rise Time :

40ns

Element Configuration :

Single

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

24 A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

24A

Transistor Polarity :

N-Channel

Supplier Device Package :

TO-268

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Tradename :

HiPerFET

Number of Channels :

1 Channel

Nominal Vgs :

3.5 V

Number of Pins :

3

Power Dissipation-Max :

660W Tc

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

DS Breakdown Voltage-Min :

900 V

Min Operating Temperature :

-55 °C

Minimum Operating Temperature :

- 55 C

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Terminal Form :

Gull wing

Product Type :

MOSFET

Mounting Type :

Surface Mount

Package :

Tube

Package Shape :

RECTANGULAR

Series :

HiPerFET™, PolarP2™

Power Dissipation :

660W

RoHS :

Details

Configuration :

Single

Number of Terminations :

2

Height :

5.1 mm

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max (Abs) :

660 W

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Published :

2008

Number of Terminals :

2

Manufacturer :

IXYS

Base Product Number :

IXFT24

Rds On (Max) @ Id, Vgs :

420m Ω @ 12A, 10V

Drain-source On Resistance-Max :

0.42Ohm

Mount :

Surface Mount