IXFT24N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

1500 mJ

Case Connection :

DRAIN

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

800V

Manufacturer :

IXYS

Height :

5.1 mm

Width :

14 mm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

800V

Pin Count :

4

Turn-Off Delay Time :

75 ns

FET Type :

N-Channel

Qualification Status :

Not Qualified

FET Feature :

--

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Tradename :

HiPerFET

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-268AA

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

400m Ω @ 12A, 10V

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

Package Shape :

RECTANGULAR

Product Type :

MOSFET

Continuous Drain Current (ID) :

24A

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

55A

Reach Compliance Code :

not_compliant

Package :

Tube

Power Dissipation :

650W

Series :

HiPerFET™, PolarHT™

Power Dissipation-Max :

650W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5V @ 4mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1 Channel

Additional Feature :

AVALANCHE RATED

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Number of Terminals :

2

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Product Category :

MOSFET

Power Dissipation-Max (Abs) :

650 W

Length :

16.05 mm

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.4Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-268

Packaging :

Tube

Element Configuration :

Single

Fall Time (Typ) :

24 ns

Minimum Operating Temperature :

- 55 C

Configuration :

Single

Factory Lead Time :

26 Weeks

DS Breakdown Voltage-Min :

800 V

Product Status :

Active

Published :

2006

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Mounting Type :

Surface Mount

Terminal Position :

Single

Transistor Polarity :

N-Channel

Rise Time :

27ns

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

24 A

Power Dissipation (Max) :

650W (Tc)

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Base Product Number :

IXFT24

Transistor Application :

SWITCHING