IXFT24N50Q

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Mfr.Part #
IXFT24N50Q
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 24A TO268
Stock
39,382
In Stock :
39,382

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Mode :
Enhancement
JESD-30 Code :
R-PSSO-G2
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
55 ns
Avalanche Energy Rating (Eas) :
1500 mJ
Package :
Tube
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
230m Ω @ 12A, 10V
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Pin Count :
4
Mount :
Surface Mount
Supplier Device Package :
TO-268
Transistor Type :
1 N-Channel
Terminal Position :
Single
Base Product Number :
IXFT24
Fall Time (Typ) :
16 ns
Mounting Style :
SMD/SMT
Product Category :
MOSFET
Drain-source On Resistance-Max :
0.23Ohm
Continuous Drain Current (ID) :
24A
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Transistor Element Material :
SILICON
Tradename :
HiPerFET
Published :
2003
Rise Time :
30ns
Mounting Type :
Surface Mount
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
300W (Tc)
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Element Configuration :
Single
Qualification Status :
Not Qualified
FET Type :
N-Channel
Number of Elements :
1
Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Matte Tin (Sn)
Terminal Form :
Gull wing
Power Dissipation-Max :
300W Tc
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Subcategory :
MOSFETs
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
yes
JEDEC-95 Code :
TO-268AA
FET Feature :
--
Manufacturer :
IXYS
Number of Terminations :
2
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
300W
Vgs (Max) :
±20V
Series :
HiPerFET™
Drain to Source Voltage (Vdss) :
500V
Transistor Polarity :
N-Channel
Number of Terminals :
2
Pulsed Drain Current-Max (IDM) :
96A
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Case Connection :
DRAIN
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
not_compliant
Drain to Source Breakdown Voltage :
500V
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 25V
Additional Feature :
AVALANCHE RATED
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
500 V
Product Type :
MOSFET
Datasheets
IXFT24N50Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFT24N50Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, IXFT24N50Q pinout, IXFT24N50Q datasheet PDF, IXFT24N50Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFT24N50Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFT24N50Q


N-Channel Tube 230m Ω @ 12A, 10V ±20V 3900pF @ 25V 95nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFT24N50Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 24A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 96A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFT24N50Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 96A.
a 500V drain to source voltage (Vdss)


IXFT24N50Q Applications


There are a lot of IXYS
IXFT24N50Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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