IXFT24N50Q
- Mfr.Part #
- IXFT24N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 24A TO268
- Stock
- 39,382
- In Stock :
- 39,382
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSSO-G2
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 55 ns
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 12A, 10V
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Pin Count :
- 4
- Mount :
- Surface Mount
- Supplier Device Package :
- TO-268
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Single
- Base Product Number :
- IXFT24
- Fall Time (Typ) :
- 16 ns
- Mounting Style :
- SMD/SMT
- Product Category :
- MOSFET
- Drain-source On Resistance-Max :
- 0.23Ohm
- Continuous Drain Current (ID) :
- 24A
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Tradename :
- HiPerFET
- Published :
- 2003
- Rise Time :
- 30ns
- Mounting Type :
- Surface Mount
- Minimum Operating Temperature :
- - 55 C
- Maximum Operating Temperature :
- + 150 C
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 300W (Tc)
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 300W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- JEDEC-95 Code :
- TO-268AA
- FET Feature :
- --
- Manufacturer :
- IXYS
- Number of Terminations :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 300W
- Vgs (Max) :
- ±20V
- Series :
- HiPerFET™
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 2
- Pulsed Drain Current-Max (IDM) :
- 96A
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 500V
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 500 V
- Product Type :
- MOSFET
- Datasheets
- IXFT24N50Q

N-Channel Tube 230m Ω @ 12A, 10V ±20V 3900pF @ 25V 95nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT24N50Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 24A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 96A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFT24N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 96A.
a 500V drain to source voltage (Vdss)
IXFT24N50Q Applications
There are a lot of IXYS
IXFT24N50Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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