IXFT24N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Power Dissipation (Max) :

300W (Tc)

Rise Time :

33ns

Transistor Polarity :

N-Channel

Product Status :

Obsolete

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Series :

HiPerFET™

Mounting Type :

Surface Mount

Power Dissipation :

300W

Continuous Drain Current (ID) :

24A

Number of Elements :

1

Transistor Type :

1 N-Channel

Qualification Status :

Not Qualified

Minimum Operating Temperature :

- 55 C

JEDEC-95 Code :

TO-268AA

Drain to Source Breakdown Voltage :

500V

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.23Ohm

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Mounting Style :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Packaging :

Tube

Case Connection :

DRAIN

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Rds On (Max) @ Id, Vgs :

230m Ω @ 12A, 10V

Polarity/Channel Type :

N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Configuration :

Single

Base Product Number :

IXFT24

Published :

2002

Pulsed Drain Current-Max (IDM) :

96A

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

500V

Element Configuration :

Single

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

300 W

Height :

5.1 mm

Width :

14 mm

Drain Current-Max (Abs) (ID) :

24 A

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Category :

MOSFET

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 4mA

Number of Terminals :

2

Brand :

IXYS

Tradename :

HyperFET

Fall Time (Typ) :

30 ns

Channel Mode :

Enhancement

Power Dissipation-Max :

300W Tc

Supplier Device Package :

TO-268

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Product Type :

MOSFET

Terminal Form :

Gull wing

Pbfree Code :

yes

Turn-Off Delay Time :

65 ns

Length :

16.05 mm

DS Breakdown Voltage-Min :

500 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1 Channel

Mount :

Surface Mount