IXFT20N80Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

20A Tc

DS Breakdown Voltage-Min :

800 V

Continuous Drain Current (ID) :

20A

Power Dissipation-Max (Abs) :

360 W

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

20 A

Fall Time (Typ) :

14 ns

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Element Configuration :

Single

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Terminal Position :

Single

Drain to Source Breakdown Voltage :

800V

Pbfree Code :

yes

Power Dissipation :

360W

Avalanche Energy Rating (Eas) :

1500 mJ

Power Dissipation (Max) :

360W (Tc)

Series :

HiPerFET™

Pulsed Drain Current-Max (IDM) :

80A

Drain-source On Resistance-Max :

0.42Ohm

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Supplier Device Package :

TO-268

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Package :

Tube

Terminal Form :

Gull wing

FET Feature :

--

Transistor Element Material :

SILICON

Manufacturer :

IXYS Corporation

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Number of Terminals :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2002

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Product Status :

Obsolete

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

420m Ω @ 10A, 10V

JEDEC-95 Code :

TO-268AA

Additional Feature :

AVALANCHE RATED

Rise Time :

27ns

Base Product Number :

IXFT20

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

RoHS Status :

RoHS Compliant

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

800V

Number of Terminations :

2

Turn-Off Delay Time :

74 ns

Packaging :

Tube

Vgs (Max) :

±20V

Power Dissipation-Max :

360W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR