IXFT20N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

800V

Product Type :

MOSFET

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Rds On (Max) @ Id, Vgs :

520m Ω @ 10A, 10V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Pin Count :

4

Channel Mode :

Enhancement

Mounting Style :

SMD/SMT

Power Dissipation-Max :

500W Tc

Max Operating Temperature :

150 °C

RoHS Status :

ROHS3 Compliant

Package :

Tube

Tradename :

HiPerFET

Factory Lead Time :

24 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

20A

JESD-609 Code :

e3

Maximum Operating Temperature :

+ 150 C

Rds On Max :

520 mΩ

Mount :

Surface Mount

Mounting Type :

Surface Mount

RoHS :

Compliant

Reach Compliance Code :

not_compliant

Input Capacitance :

4.685 nF

Drain to Source Resistance :

520 mΩ

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Rise Time :

24ns

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™, PolarHT™

Vgs(th) (Max) @ Id :

5V @ 4mA

Terminal Form :

Gull wing

Published :

2006

Power Dissipation :

500W

Drain-source On Resistance-Max :

0.52Ohm

Additional Feature :

AVALANCHE RATED

Length :

16.05 mm

Number of Terminals :

2

Number of Elements :

1

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Supplier Device Package :

TO-268

Input Capacitance (Ciss) (Max) @ Vds :

4685pF @ 25V

Number of Terminations :

2

FET Type :

N-Channel

Height :

5.1 mm

Width :

14 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Product Number :

IXFT20

Transistor Type :

1 N-Channel

Type :

PolarHV HiPerFET Power MOSFET

Packaging :

Tube

Radiation Hardening :

No

Min Operating Temperature :

-55 °C

Surface Mount :

yes

Drain to Source Breakdown Voltage :

800V

Fall Time (Typ) :

24 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Subcategory :

MOSFETs

Turn-Off Delay Time :

85 ns

Element Configuration :

Single

JEDEC-95 Code :

TO-268AA

Power Dissipation (Max) :

500W (Tc)

Avalanche Energy Rating (Eas) :

1000 mJ

FET Feature :

--

Brand :

IXYS

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Polarity :

N-Channel

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Lead Free :

Lead Free

Case Connection :

DRAIN

Max Power Dissipation :

500 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Category :

MOSFET

DS Breakdown Voltage-Min :

800 V

JESD-30 Code :

R-PSSO-G2