IXFT20N60Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Package :

Tube

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Packaging :

Tube

DS Breakdown Voltage-Min :

600 V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

20ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Compliant

Max Operating Temperature :

150 °C

Product Status :

Obsolete

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.35Ohm

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-268AA

Rds On Max :

350 mΩ

Input Capacitance :

3.3 nF

Supplier Device Package :

TO-268

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

300 W

Manufacturer :

IXYS Corporation

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Terminal Form :

Gull wing

Power Dissipation (Max) :

300W (Tc)

Operating Temperature :

-55°C~150°C TJ

FET Feature :

--

FET Type :

N-Channel

Drain to Source Resistance :

350 mΩ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Product Number :

IXFT20

Terminal Finish :

Matte Tin (Sn)

Series :

HiPerFET™

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

300W

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Power Dissipation-Max :

300W Tc

Drain Current-Max (Abs) (ID) :

20 A

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

1500 mJ

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

20A

Surface Mount :

yes

Number of Elements :

1

Power Dissipation-Max (Abs) :

300 W

Number of Terminals :

2

Mount :

Surface Mount

Published :

2003

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

80A

Vgs (Max) :

±30V

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

350m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Min Operating Temperature :

-55 °C

Fall Time (Typ) :

20 ns

Pin Count :

4