IXFT20N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

37ns

Width :

14 mm

Turn-Off Delay Time :

56 ns

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Tradename :

HiPerFET

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Number of Elements :

1

Transistor Type :

1 N-Channel

Mounting Style :

SMD/SMT

Power Dissipation :

660W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Brand :

IXYS

JESD-609 Code :

e3

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Series :

HiPerFET™, PolarP2™

FET Feature :

--

Package Shape :

RECTANGULAR

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

MOSFET

Product Status :

Active

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-268AA

Vgs (Max) :

±30V

Package :

Tube

DS Breakdown Voltage-Min :

1000 V

Supplier Device Package :

TO-268

Packaging :

Tube

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

800 mJ

Rds On (Max) @ Id, Vgs :

570m Ω @ 10A, 10V

Pbfree Code :

yes

Configuration :

Single

Mounting Type :

Surface Mount

Base Product Number :

IXFT20

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

6.5V @ 1mA

JESD-30 Code :

R-PSSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Resistance :

570mOhm

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Pulsed Drain Current-Max (IDM) :

50A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

660W (Tc)

Power Dissipation-Max (Abs) :

660 W

Published :

2007

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

20A

Drain to Source Voltage (Vdss) :

1000V

Minimum Operating Temperature :

- 55 C

Type :

Polar Power MOSFET HiPerFET

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

126nC @ 10V

Drain-source On Resistance-Max :

0.57 Ω

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max :

660W Tc

Product Category :

MOSFET

Qualification Status :

Not Qualified

Height :

5.1 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

2

Length :

16.05 mm

Lead Free :

Lead Free

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

20 A

FET Type :

N-Channel

Channel Mode :

Enhancement

Fall Time (Typ) :

45 ns

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

1kV

Pin Count :

4

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Number of Terminations :

2

Factory Lead Time :

26 Weeks

Polarity/Channel Type :

N-Channel