IXFT18N100Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

1000 V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Packaging :

Tube

Series :

HiPerFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Pin Count :

4

Transistor Element Material :

SILICON

Configuration :

Single

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Minimum Operating Temperature :

-55 °C

Number of Terminals :

2

Surface Mount :

yes

Maximum Operating Temperature :

+ 150 C

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

4890pF @ 25V

Continuous Drain Current (ID) :

18A

Drain-source On Resistance-Max :

0.66Ohm

Drain to Source Voltage (Vdss) :

1000V

Drain to Source Breakdown Voltage :

1kV

Number of Elements per Chip :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

830W

Product Category :

MOSFET

Transistor Type :

1 N-Channel

Drain Current-Max (Abs) (ID) :

18 A

Package :

Tube

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Length :

16.05mm

Turn On Delay Time :

37 ns

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

60A

Product Status :

Active

Power Dissipation-Max :

830W Tc

Fall Time (Typ) :

13 ns

Product Type :

MOSFET

Vgs (Max) :

±30V

Height :

5.1mm

JEDEC-95 Code :

TO-268AA

Mount :

Surface Mount

Power Dissipation (Max) :

830W (Tc)

JESD-30 Code :

R-PSSO-G2

Mounting Style :

SMD/SMT

Factory Lead Time :

26 Weeks

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Rise Time :

32ns

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-268

Power Dissipation-Max (Abs) :

830 W

Element Configuration :

Single

Width :

14mm

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Channel Type :

N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2011

Manufacturer :

IXYS

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

40 ns

Avalanche Energy Rating (Eas) :

1500 mJ

Base Product Number :

IXFT18

Package Type :

TO-268

Rds On (Max) @ Id, Vgs :

660m Ω @ 9A, 10V

Channel Mode :

Enhancement

FET Feature :

--

Terminal Position :

Single

Number of Pins :

3

JESD-609 Code :

e3

Brand :

IXYS

Tradename :

HiPerFET