IXFT16N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Power Dissipation (Max) :

460W (Tc)

FET Feature :

--

Package :

Tube

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

460W Tc

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Published :

2006

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

16.05 mm

Terminal Position :

Single

JEDEC-95 Code :

TO-268AA

Series :

HiPerFET™, PolarHT™

Height :

5.1 mm

Reach Compliance Code :

Unknown

Pin Count :

4

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Width :

14 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Number of Channels :

1 Channel

Avalanche Energy Rating (Eas) :

1000 mJ

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Case Connection :

DRAIN

Tradename :

HiPerFET

Base Product Number :

IXFT16

Mounting Style :

SMD/SMT

Number of Terminals :

2

Product Status :

Active

JESD-609 Code :

e3

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Supplier Device Package :

TO-268

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.6Ohm

Continuous Drain Current (ID) :

16A

Brand :

IXYS

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Fall Time (Typ) :

29 ns

Package Shape :

RECTANGULAR

Turn-Off Delay Time :

75 ns

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Pbfree Code :

yes

Factory Lead Time :

26 Weeks

Qualification Status :

Not Qualified

Configuration :

Single

Rise Time :

32ns

DS Breakdown Voltage-Min :

800 V

Vgs(th) (Max) @ Id :

5V @ 4mA

Subcategory :

MOSFETs

Drain to Source Voltage (Vdss) :

800V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

460W

Packaging :

Tube

Vgs (Max) :

±30V

Number of Terminations :

2

Terminal Form :

Gull wing

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

800V

Transistor Application :

SWITCHING

Surface Mount :

yes

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

600m Ω @ 500mA, 10V