IXFT15N80Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

800V

Manufacturer :

IXYS

Drain Current-Max (Abs) (ID) :

15 A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-268

Current - Continuous Drain (Id) @ 25°C :

15A Tc

DS Breakdown Voltage-Min :

800 V

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max (Abs) :

300 W

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Height :

5.1 mm

Published :

2000

Max Power Dissipation :

300 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Fall Time (Typ) :

16 ns

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Width :

14 mm

Input Capacitance :

4.3 nF

Min Operating Temperature :

-55 °C

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

1000 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Turn-Off Delay Time :

53 ns

Product Status :

Obsolete

Pin Count :

4

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

60A

Number of Terminals :

2

Power Dissipation (Max) :

300W (Tc)

Channel Mode :

Enhancement

Operating Mode :

ENHANCEMENT MODE

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

600m Ω @ 7.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-268

Reach Compliance Code :

not_compliant

Power Dissipation :

300W

Package :

Tube

Drain to Source Voltage (Vdss) :

800V

Number of Terminations :

2

RoHS :

Compliant

Maximum Operating Temperature :

+ 150 C

Max Operating Temperature :

150 °C

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Drain to Source Resistance :

600 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

Case Connection :

DRAIN

Rds On Max :

600 mΩ

Drain-source On Resistance-Max :

0.6Ohm

Configuration :

Single

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Element Configuration :

Single

Power Dissipation-Max :

300W Tc

Terminal Position :

Single

Transistor Application :

SWITCHING

Base Product Number :

IXFT15

FET Feature :

--

Minimum Operating Temperature :

- 55 C

Rise Time :

27ns

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Tradename :

HiPerFET

Continuous Drain Current (ID) :

15A

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Brand :

IXYS

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Series :

HiPerFET™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

16.05 mm

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4.5V @ 4mA