IXFT15N100Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

1000V

Maximum Operating Temperature :

+150 °C

Avalanche Energy Rating (Eas) :

1000 mJ

Drain Current-Max (Abs) (ID) :

15 A

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

Mount :

Surface Mount

JEDEC-95 Code :

TO-268AA

Tradename :

HiPerFET

Product Type :

MOSFET

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Package :

Tube

Transistor Polarity :

N-Channel

Width :

14mm

Rise Time :

250ns

Minimum Operating Temperature :

-55 °C

Power Dissipation :

690W

Series :

HiPerFET™

Surface Mount :

yes

Pin Count :

4

Brand :

IXYS

Turn On Delay Time :

28 ns

Power Dissipation-Max :

690W Tc

Configuration :

Single

Supplier Device Package :

TO-268

Base Product Number :

IXFT15

Power Dissipation (Max) :

690W (Tc)

Element Configuration :

Single

Number of Channels :

1 Channel

Package Type :

TO-268

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Product Category :

MOSFET

Power Dissipation-Max (Abs) :

690 W

Turn-Off Delay Time :

30 ns

Number of Terminations :

2

Drain to Source Breakdown Voltage :

1kV

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Published :

2011

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Drain-source On Resistance-Max :

1.05 Ω

DS Breakdown Voltage-Min :

1000 V

Vgs (Max) :

±30V

Reach Compliance Code :

Unknown

FET Type :

N-Channel

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

6.5V @ 4mA

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Number of Elements per Chip :

1

Number of Pins :

3

Length :

16.05mm

Channel Type :

N

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Factory Lead Time :

26 Weeks

Height :

5.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 N-Channel

Product Status :

Active

Number of Terminals :

2

Pulsed Drain Current-Max (IDM) :

45A

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 7.5A, 10V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

15A

Mounting Style :

SMD/SMT

Packaging :

Tube

Transistor Element Material :

SILICON

Number of Elements :

1