IXFT150N20T
- Mfr.Part #
- IXFT150N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 150A TO268
- Stock
- 26,452
- In Stock :
- 26,452
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 26 Weeks
- JESD-609 Code :
- e3
- Transistor Polarity :
- N-Channel
- Series :
- HiPerFET™, TrenchT2™
- Pin Count :
- 4
- Reach Compliance Code :
- not_compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- Number of Terminations :
- 2
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 375A
- Drain to Source Voltage (Vdss) :
- 200V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 75A, 10V
- Mount :
- Surface Mount
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.015Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 177nC @ 10V
- FET Type :
- N-Channel
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-268
- Mounting Type :
- Surface Mount
- Tradename :
- HiPerFET
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Base Product Number :
- IXFT150
- Continuous Drain Current (ID) :
- 150A
- RoHS :
- Details
- Power Dissipation-Max :
- 890W Tc
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2011
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Brand :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 200V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 11700pF @ 25V
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- Power Dissipation (Max) :
- 890W (Tc)
- Datasheets
- IXFT150N20T
IXFT150N20T Documents

N-Channel Tube 15m Ω @ 75A, 10V ±20V 11700pF @ 25V 177nC @ 10V 200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT150N20T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 150A continuous drain current (ID).Peak drain current is 375A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFT150N20T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 150A
based on its rated peak drain current 375A.
a 200V drain to source voltage (Vdss)
IXFT150N20T Applications
There are a lot of IXYS
IXFT150N20T applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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