IXFT150N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

200V

Terminal Position :

Single

Package :

Tube

Mounting Type :

Surface Mount

Product Category :

MOSFET

Case Connection :

DRAIN

Mounting Style :

SMD/SMT

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Reach Compliance Code :

not_compliant

Series :

HiPerFET™, TrenchT2™

Manufacturer :

IXYS

Power Dissipation-Max :

890W Tc

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

150A

Base Product Number :

IXFT150

Tradename :

HiPerFET

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

375A

FET Type :

N-Channel

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Mount :

Surface Mount

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

11700pF @ 25V

Published :

2011

RoHS :

Details

Rds On (Max) @ Id, Vgs :

15m Ω @ 75A, 10V

Number of Terminations :

2

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Product Type :

MOSFET

Power Dissipation (Max) :

890W (Tc)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 4mA

Number of Elements :

1

FET Feature :

--

Brand :

IXYS

Pin Count :

4

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Factory Lead Time :

26 Weeks

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

177nC @ 10V

Drain-source On Resistance-Max :

0.015Ohm

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

1500 mJ

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

200V

Supplier Device Package :

TO-268

RoHS Status :

ROHS3 Compliant