IRG4RC20FTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

REACH SVHC :

No SVHC

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Current Rating :

22A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.8034mm

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Input Type :

Standard

Voltage - Rated DC :

600V

Terminal Form :

Gull wing

Turn-Off Delay Time :

194 ns

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

51 ns

Termination :

SMD/SMT

Test Condition :

480V, 12A, 50 Ω, 15V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Width :

6.22mm

Current - Collector Pulsed (Icm) :

44A

Rise Time :

24ns

Turn On Delay Time :

26 ns

Number of Elements :

1

Base Part Number :

IRG4RC20FPBF

Radiation Hardening :

No

Weight :

350.003213mg

Td (on/off) @ 25°C :

26ns/194ns

Mount :

Surface Mount

Gate Charge :

27nC

Switching Energy :

190μJ (on), 920μJ (off)

Lead Free :

Contains Lead, Lead Free

Length :

6.7056mm

Power Dissipation :

66W

Collector Emitter Voltage (VCEO) :

2.1V

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

66W

Collector Emitter Saturation Voltage :

2.1V

JEDEC-95 Code :

TO-252AA

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Turn Off Time-Nom (toff) :

706 ns

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Published :

2001

Max Collector Current :

22A

JESD-30 Code :

R-PSSO-G2

Max Breakdown Voltage :

600V