IRG4RC20FTRL
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- Mfr.Part #
- IRG4RC20FTRL
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 22A 66W DPAK
- Stock
- 13,665
- In Stock ：
- 13,665
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Turn On Time :
- 51 ns
- Current - Collector (Ic) (Max) :
- 22A
- Surface Mount :
- yes
- Base Part Number :
- IRG4RC20F
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Gate Charge :
- 27nC
- ECCN Code :
- EAR99
- Power - Max :
- 66W
- Input Type :
- Standard
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Td (on/off) @ 25°C :
- 26ns/194ns
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Current - Collector Pulsed (Icm) :
- 44A
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Test Condition :
- 480V, 12A, 50 Ω, 15V
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- POWER CONTROL
- Switching Energy :
- 190μJ (on), 920μJ (off)
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 12A
- Number of Terminations :
- 2
- Turn Off Time-Nom (toff) :
- 706 ns
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- TO-252AA
- Datasheets
- IRG4RC20FTRL
IRG4RC20FTRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4RC20FTRL Benefits
Generation 4 IGBTs offer the highest efficiency
Optimized for specific application conditions
High power density and current rating
IRG4RC20FTRL Features
Fast: Optimized for medium operating
frequencies (1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation IGBTs.
Industry-standard TO-252AA package
Combines very low VCE(on) with low switching
losses
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