IRG4RC10UTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 5A

Transistor Element Material :

SILICON

Element Configuration :

Single

Height :

1.2446mm

Weight :

350.003213mg

Terminal Form :

Gull wing

Gate Charge :

15nC

Additional Feature :

ULTRA FAST

Polarity/Channel Type :

N-Channel

Rise Time :

11ns

Lead Free :

Contains Lead

Length :

6.7056mm

Width :

6.223mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

8.5A

Turn Off Time-Nom (toff) :

330 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

2.6V

Power Dissipation :

38W

Test Condition :

480V, 5A, 100 Ω, 15V

Max Breakdown Voltage :

600V

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Max Power Dissipation :

38W

Radiation Hardening :

No

Turn On Time :

32 ns

Number of Pins :

3

Number of Elements :

1

Td (on/off) @ 25°C :

19ns/116ns

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Voltage - Rated DC :

600V

Base Part Number :

IRG4RC10UPBF

Switching Energy :

80μJ (on), 160μJ (off)

Max Collector Current :

8.5A

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

2.6V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Current - Collector Pulsed (Icm) :

34A

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-252AA

Published :

2004