IRG4RC10UTRLPBF

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Mfr.Part #
IRG4RC10UTRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IGBT 600V 8.5A 38W DPAK
Stock
42,518
In Stock :
42,518

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Element Configuration :
Single
Vce(on) (Max) @ Vge, Ic :
2.6V @ 15V, 5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
38W
Collector Emitter Breakdown Voltage :
600V
Base Part Number :
IRG4RC10UPBF
Power Dissipation :
38W
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150°C
Min Operating Temperature :
-55°C
Max Power Dissipation :
38W
Voltage - Collector Emitter Breakdown (Max) :
600V
Supplier Device Package :
D-Pak
Collector Emitter Voltage (VCEO) :
2.6V
Input Type :
Standard
Td (on/off) @ 25°C :
19ns/116ns
Current - Collector (Ic) (Max) :
8.5A
Gate Charge :
15nC
Current - Collector Pulsed (Icm) :
34A
Switching Energy :
80μJ (on), 160μJ (off)
Mounting Type :
Surface Mount
Test Condition :
480V, 5A, 100Ohm, 15V
Published :
2004
Current Rating :
8.5A
Packaging :
Tape and Reel (TR)
RoHS Status :
RoHS Compliant
Max Collector Current :
8.5A
Mount :
Surface Mount
Number of Pins :
3
Collector Emitter Saturation Voltage :
2.6V
Datasheets
IRG4RC10UTRLPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4RC10UTRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:IRG4RC10UPBF, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, IRG4RC10UTRLPBF pinout, IRG4RC10UTRLPBF datasheet PDF, IRG4RC10UTRLPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4RC10UTRLPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4RC10UTRLPBF


IRG4RC10UTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4RC10UTRLPBF Description


IRG4RC10UTRLPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, and>200 kHz in resonant mode. As a Generation 4 IGBT,  it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10UTRLPBF IGBT is supplied in the D-Pak/TO-252AA package for the purpose of saving board space.



IRG4RC10UTRLPBF Features


Industry-standard D-PAK packages

Extremely tight Vce(on) distribution

Tighter parameter distribution

Highest efficiencies available



IRG4RC10SDTRLP Applications


Industrial motor drive

Solar inverters

Welding 


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