IRG4RC10UPBF
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- Mfr.Part #
- IRG4RC10UPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 8.5A 38W DPAK
- Stock
- 19,669
- In Stock ：
- 19,669
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 5A
- Current Rating :
- 8.5A
- Collector Emitter Voltage (VCEO) :
- 2.6V
- Max Power Dissipation :
- 38W
- Published :
- 2004
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Pulsed (Icm) :
- 34A
- Switching Energy :
- 80μJ (on), 160μJ (off)
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Gate Charge :
- 15nC
- Test Condition :
- 480V, 5A, 100Ohm, 15V
- Collector Emitter Breakdown Voltage :
- 600V
- Collector Emitter Saturation Voltage :
- 2.6V
- Power Dissipation :
- 38W
- Input Type :
- Standard
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 600V
- Number of Pins :
- 3
- Max Collector Current :
- 8.5A
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- D-Pak
- Rise Time :
- 11ns
- Td (on/off) @ 25°C :
- 19ns/116ns
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Power - Max :
- 38W
- Base Part Number :
- IRG4RC10UPBF
- Current - Collector (Ic) (Max) :
- 8.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Datasheets
- IRG4RC10UPBF
IRG4RC10UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4RC10UPBF Description
IRG4RC10UPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, and＞200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10UPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
IRG4RC10UPBF Features
Industry-standard D2PAK packages
Extremely tight Vce(on) distribution
Tighter parameter distribution
Highest efficiencies available
IRG4RC10UPBF Applications
Industrial motor drive
Solar inverters
Welding
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