IRG4RC10UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Current - Collector Pulsed (Icm) :

34A

Case Connection :

COLLECTOR

Gate Charge :

15nC

Voltage - Rated DC :

600V

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

87 ns

Additional Feature :

LOW CONDUCTION LOSS

Number of Pins :

3

Base Part Number :

IRG4RC10UDPBF

Turn On Time :

56 ns

Max Power Dissipation :

38W

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 5A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

16ns

Gate-Emitter Voltage-Max :

20V

Max Collector Current :

8.5A

Radiation Hardening :

No

JESD-609 Code :

e3

Element Configuration :

Single

Packaging :

Tube

Power Dissipation :

38W

Height :

1.2446mm

Weight :

350.003213mg

Td (on/off) @ 25°C :

40ns/87ns

Turn Off Time-Nom (toff) :

345 ns

Termination :

SMD/SMT

JEDEC-95 Code :

TO-252AA

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Input Type :

Standard

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Length :

6.7056mm

Max Breakdown Voltage :

600V

Reverse Recovery Time :

28 ns

Turn On Delay Time :

40 ns

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

1999

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Factory Lead Time :

17 Weeks

Collector Emitter Voltage (VCEO) :

2.6V

Switching Energy :

140μJ (on), 120μJ (off)

Current Rating :

8.5A

Transistor Application :

POWER CONTROL

Number of Elements :

1

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

2.6V

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

600V

Fall Time-Max (tf) :

210ns

Test Condition :

480V, 5A, 100 Ω, 15V