IRG4RC10UD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Voltage - Collector Emitter Breakdown (Max) :

600V

Turn On Time :

56 ns

Transistor Application :

POWER CONTROL

Current - Collector (Ic) (Max) :

8.5A

Current - Collector Pulsed (Icm) :

34A

Turn Off Time-Nom (toff) :

345 ns

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

28ns

Input Type :

Standard

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Terminations :

2

Case Connection :

COLLECTOR

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Lead (Sn/Pb)

Additional Feature :

LOW CONDUCTION LOSS

Gate Charge :

15nC

Terminal Position :

Single

Power - Max :

38W

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

245

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 5A

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Td (on/off) @ 25°C :

40ns/87ns

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Switching Energy :

140μJ (on), 120μJ (off)

Test Condition :

480V, 5A, 100 Ω, 15V

Published :

2001

JEDEC-95 Code :

TO-252AA

Number of Elements :

1