IRG4RC10SPBF
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- Mfr.Part #
- IRG4RC10SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 14A 38W DPAK
- Stock
- 5,344
- In Stock ：
- 5,344
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Gate Charge :
- 15nC
- Td (on/off) @ 25°C :
- 25ns/630ns
- Voltage - Rated DC :
- 600V
- Number of Pins :
- 3
- Base Part Number :
- IRG4RC10SPBF
- Current Rating :
- 14A
- Current - Collector Pulsed (Icm) :
- 18A
- Power Dissipation :
- 38W
- Max Collector Current :
- 14A
- Height :
- 2.39mm
- Rise Time :
- 28ns
- Max Operating Temperature :
- 150°C
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.7V
- Collector Emitter Breakdown Voltage :
- 600V
- Input Type :
- Standard
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Max Power Dissipation :
- 38W
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 15V, 8A
- Termination :
- SMD/SMT
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~150°C TJ
- Switching Energy :
- 140μJ (on), 2.58mJ (off)
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- D-Pak
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Current - Collector (Ic) (Max) :
- 14A
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Power - Max :
- 38W
- Width :
- 6.22mm
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Test Condition :
- 480V, 8A, 100Ohm, 15V
- Length :
- 6.73mm
- Datasheets
- IRG4RC10SPBF
IRG4RC10SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4RC10SPBF Description
IRG4RC10SPBF is a 600v insulated gate bipolar transistor. The Infineon IRG4RC10SPBF can be applied in Communications equipment, Wired networking, Enterprise systems, Enterprise projectors, Personal electronics, and Portable electronics applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4RC10SPBF is in the TO-252AA package with 38W power dissipation.
IRG4RC10SPBF Features
Extremely low voltage drop; 1.0V typical at 2A, 100°C
Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than the previous generation
Industry-standard TO-252AA package
Generation 4 IGBTs offer the highest efficiency available
IGBTs optimized for specified application conditions
IRG4RC10SPBF Applications
Communications equipment
Wired networking
Enterprise systems
Enterprise projectors
Personal electronics
Portable electronics
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