IRG4RC10SDTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

18A

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature :

LOW CONDUCTION LOSS

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

1780 ns

Td (on/off) @ 25°C :

76ns/815ns

Max Collector Current :

14A

Input Type :

Standard

Collector Emitter Saturation Voltage :

1.7V

Base Part Number :

IRG4RC10SDPBF

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Mount :

Surface Mount

Gate-Emitter Thr Voltage-Max :

6V

Max Power Dissipation :

38W

Packaging :

Tape and Reel (TR)

Gate-Emitter Voltage-Max :

20V

Transistor Application :

POWER CONTROL

RoHS Status :

RoHS Compliant

Number of Pins :

3

Gate Charge :

15nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

28 ns

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Published :

1999

Fall Time-Max (tf) :

1080ns

Collector Emitter Voltage (VCEO) :

1.8V

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 8A

Turn On Time :

106 ns

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Test Condition :

480V, 8A, 100 Ω, 15V

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

17 Weeks

Power Dissipation :

38W

Number of Elements :

1

Radiation Hardening :

No

JESD-609 Code :

e3

Switching Energy :

310μJ (on), 3.28mJ (off)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

600V