IRG4RC10SDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Length :

6.7056mm

Mount :

Surface Mount

Number of Terminations :

2

Termination :

SMD/SMT

Current - Collector Pulsed (Icm) :

18A

JEDEC-95 Code :

TO-252AA

Gate-Emitter Voltage-Max :

20V

Factory Lead Time :

8 Weeks

Collector Emitter Saturation Voltage :

1.7V

Voltage - Rated DC :

600V

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

76ns/815ns

Switching Energy :

310μJ (on), 3.28mJ (off)

Packaging :

Tube

Max Power Dissipation :

38W

Power Dissipation :

38W

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 8A

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOW CONDUCTION LOSS

Gate-Emitter Thr Voltage-Max :

6V

Lead Free :

Lead Free

Published :

2004

Height :

1.2446mm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Pins :

3

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

1780 ns

Gate Charge :

15nC

Width :

6.22mm

Fall Time-Max (tf) :

1080ns

Collector Emitter Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Max Collector Current :

14A

Number of Elements :

1

Reverse Recovery Time :

28 ns

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

31ns

Element Configuration :

Single

Radiation Hardening :

No

Terminal Finish :

MATTE TIN OVER NICKEL

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

1.8V

Test Condition :

480V, 8A, 100 Ω, 15V

Base Part Number :

IRG4RC10SDPBF

Turn On Time :

106 ns

Current Rating :

14A

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30