IRG4RC10SDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Published :

2004

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Length :

6.7056mm

Case Connection :

COLLECTOR

Switching Energy :

310μJ (on), 3.28mJ (off)

Current - Collector Pulsed (Icm) :

18A

Gate-Emitter Voltage-Max :

20V

Rise Time :

31ns

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

8 Weeks

JEDEC-95 Code :

TO-252AA

Turn On Time :

106 ns

Collector Emitter Voltage (VCEO) :

1.8V

Max Power Dissipation :

38W

Width :

6.22mm

Max Collector Current :

14A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Reverse Recovery Time :

28 ns

Td (on/off) @ 25°C :

76ns/815ns

Input Type :

Standard

Element Configuration :

Single

Base Part Number :

IRG4RC10SDPBF

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 8A

JESD-609 Code :

e3

Transistor Application :

POWER CONTROL

Number of Pins :

3

Collector Emitter Breakdown Voltage :

600V

Packaging :

Tube

Test Condition :

480V, 8A, 100 Ω, 15V

Turn Off Time-Nom (toff) :

1780 ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

15nC

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Current Rating :

14A

Power Dissipation :

38W

Gate-Emitter Thr Voltage-Max :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

600V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

MATTE TIN OVER NICKEL

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Fall Time-Max (tf) :

1080ns

Termination :

SMD/SMT

Additional Feature :

LOW CONDUCTION LOSS

Height :

1.2446mm

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

1.7V