IRG4RC10SD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Td (on/off) @ 25°C :

76ns/815ns

Voltage - Collector Emitter Breakdown (Max) :

600V

Gate Charge :

15nC

Packaging :

Tube

Qualification Status :

Not Qualified

Test Condition :

480V, 8A, 100 Ω, 15V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

245

Terminal Finish :

Tin/Lead (Sn/Pb)

JEDEC-95 Code :

TO-252AA

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Case Connection :

COLLECTOR

Number of Terminations :

2

Turn On Time :

106 ns

Turn Off Time-Nom (toff) :

1780 ns

Current - Collector Pulsed (Icm) :

18A

Additional Feature :

LOW CONDUCTION LOSS

Switching Energy :

310μJ (on), 3.28mJ (off)

Reverse Recovery Time :

28ns

JESD-609 Code :

e0

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Polarity/Channel Type :

N-Channel

Published :

2007

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Current - Collector (Ic) (Max) :

14A

Transistor Application :

POWER CONTROL

Power - Max :

38W

Terminal Form :

Gull wing

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 8A