IRG4RC10KTR
- Mfr.Part #
- IRG4RC10KTR
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 9A 38W DPAK
- Stock
- 41,858
- In Stock :
- 41,858
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge :
- 19nC
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.62V @ 15V, 5A
- Turn On Time :
- 38 ns
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Input Type :
- Standard
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Qualification Status :
- Not Qualified
- Base Part Number :
- IRG4RC10K
- Transistor Application :
- Motor Control
- Switching Energy :
- 160μJ (on), 100μJ (off)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Power - Max :
- 38W
- Test Condition :
- 480V, 5A, 100 Ω, 15V
- Td (on/off) @ 25°C :
- 11ns/51ns
- Turn Off Time-Nom (toff) :
- 417 ns
- Current - Collector Pulsed (Icm) :
- 18A
- Current - Collector (Ic) (Max) :
- 9A
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-252AA
- Datasheets
- IRG4RC10KTR

IRG4RC10KTR datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4RC10KTR Description
The IRG4RC10KTR is an insulated gate bipolar transistor. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRG4RC10KTR Features
-
Generation 4 IGBT design provides higher efficiency than Generation 3
-
Industry standard TO-252AA package
-
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10μs @ 125°C, VGE = 15V
-
Generation 4 IGBT's offer highest efficiency available
-
IGBT's optimized for specified application conditions
IRG4RC10KTR Applications
-
It is used in AC and DC motor drives offering speed control.
-
It is used in chopper and inverters.
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It is used in solar inverters.
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It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
-
It is used in UPS (Uninterruptible Power Supply) system.
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