IRG4RC10KTR

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Mfr.Part #
IRG4RC10KTR
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IGBT 600V 9A 38W DPAK
Stock
41,858
In Stock :
41,858

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Number of Terminations :
2
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge :
19nC
Voltage - Collector Emitter Breakdown (Max) :
600V
Vce(on) (Max) @ Vge, Ic :
2.62V @ 15V, 5A
Turn On Time :
38 ns
Mounting Type :
Surface Mount
Number of Elements :
1
Terminal Form :
Gull wing
RoHS Status :
Non-RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Input Type :
Standard
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Configuration :
Single
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
30
Qualification Status :
Not Qualified
Base Part Number :
IRG4RC10K
Transistor Application :
Motor Control
Switching Energy :
160μJ (on), 100μJ (off)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2001
Power - Max :
38W
Test Condition :
480V, 5A, 100 Ω, 15V
Td (on/off) @ 25°C :
11ns/51ns
Turn Off Time-Nom (toff) :
417 ns
Current - Collector Pulsed (Icm) :
18A
Current - Collector (Ic) (Max) :
9A
Peak Reflow Temperature (Cel) :
260
Polarity/Channel Type :
N-Channel
JEDEC-95 Code :
TO-252AA
Datasheets
IRG4RC10KTR
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4RC10KTR from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Base Part Number:IRG4RC10K, IRG4RC10KTR pinout, IRG4RC10KTR datasheet PDF, IRG4RC10KTR amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4RC10KTR ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4RC10KTR


IRG4RC10KTR datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4RC10KTR Description


The IRG4RC10KTR is an insulated gate bipolar transistor. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.



IRG4RC10KTR Features


  • Generation 4 IGBT design provides higher efficiency  than Generation 3

  • Industry standard TO-252AA package

  • Short Circuit Rated UltraFast:  Optimized for high  operating frequencies >5.0 kHz , and Short Circuit  Rated to 10μs @ 125°C, VGE = 15V

  • Generation 4 IGBT's offer highest efficiency available

  • IGBT's optimized for specified application conditions



IRG4RC10KTR Applications


  • It is used in AC and DC motor drives offering speed control.

  • It is used in chopper and inverters.

  • It is used in solar inverters.

  • It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

  • It is used in UPS (Uninterruptible Power Supply) system.


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