IRG4RC10KPBF

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Mfr.Part #
IRG4RC10KPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IGBT 600V 9A 38W DPAK
Stock
14,314
In Stock :
14,314

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Power Dissipation :
38W
Lead Free :
Lead Free
Packaging :
Tube
Number of Pins :
3
Current - Collector (Ic) (Max) :
9A
Max Power Dissipation :
38W
Min Operating Temperature :
-55°C
REACH SVHC :
No SVHC
RoHS Status :
RoHS Compliant
Voltage - Rated DC :
600V
Collector Emitter Voltage (VCEO) :
2.62V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type :
Surface Mount
Collector Emitter Breakdown Voltage :
600V
Mount :
Surface Mount
Element Configuration :
Single
Collector Emitter Saturation Voltage :
2.62V
Current - Collector Pulsed (Icm) :
18A
Operating Temperature :
-55°C~150°C TJ
Test Condition :
480V, 5A, 100Ohm, 15V
Td (on/off) @ 25°C :
11ns/51ns
Published :
2004
Radiation Hardening :
No
Input Type :
Standard
Voltage - Collector Emitter Breakdown (Max) :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Switching Energy :
160μJ (on), 100μJ (off)
Vce(on) (Max) @ Vge, Ic :
2.62V @ 15V, 5A
Max Collector Current :
9A
Max Operating Temperature :
150°C
Supplier Device Package :
D-Pak
Current Rating :
9A
Power - Max :
38W
Gate Charge :
19nC
Datasheets
IRG4RC10KPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4RC10KPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IRG4RC10KPBF pinout, IRG4RC10KPBF datasheet PDF, IRG4RC10KPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4RC10KPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4RC10KPBF


IRG4RC10KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4RC10KPBF Description


An INSULATED GATE BIPOLAR TRANSISTOR is IRG4RC10KPBF.



IRG4RC10KPBF Features


? Short Circuit Rated UltraFast: Designed for high operating frequencies >5.0 kHz and short circuit rated to 10 s at 125 °C, VGE = 15 volts.


? The Generation 4 IGBT design is more efficient than the Generation 3 design.


? TO-252AA packaging, a common form factor


? Free of lead



IRG4RC10KPBF Applications


Switching applications


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