IRG4RC10KDTRPBF
- Mfr.Part #
- IRG4RC10KDTRPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- SHORT CIRCUIT RATED ULTRAFAST IG
- Stock
- 10,218
- In Stock :
- 10,218
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Termination :
- SMD/SMT
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JEDEC-95 Code :
- TO-252AA
- Td (on/off) @ 25°C :
- 49ns/97ns
- Fall Time-Max (tf) :
- 210ns
- Collector Emitter Voltage (VCEO) :
- 2.62V
- Gate Charge :
- 19nC
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Time :
- 78 ns
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- COLLECTOR
- Vce(on) (Max) @ Vge, Ic :
- 2.62V @ 15V, 5A
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 38W
- Published :
- 2004
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 38W
- Max Breakdown Voltage :
- 600V
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Turn Off Time-Nom (toff) :
- 410 ns
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Switching Energy :
- 250μJ (on), 140μJ (off)
- Input Type :
- Standard
- Max Collector Current :
- 9A
- Gate-Emitter Voltage-Max :
- 20V
- Number of Elements :
- 1
- Height :
- 1.2446mm
- Polarity/Channel Type :
- N-Channel
- Current - Collector Pulsed (Icm) :
- 18A
- Base Part Number :
- IRG4RC10KDPBF
- Width :
- 6.223mm
- Transistor Application :
- Motor Control
- Collector Emitter Saturation Voltage :
- 2.39V
- Rise Time :
- 24ns
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Weight :
- 350.003213mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Reverse Recovery Time :
- 28 ns
- Lead Free :
- Lead Free
- Length :
- 6.7056mm
- Factory Lead Time :
- 13 Weeks
- Test Condition :
- 480V, 5A, 100 Ω, 15V
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRG4RC10KDTRPBF

IRG4RC10KDTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4RC10KDTRPBF Description
TRANSISTOR WITH AN ULTRAFAST SOFT RECOVERY DIODE AND AN INSULATED GATE BIPOLAR
IRG4RC10KDTRPBF Features
-
Optimized for high operating frequencies >5.0 kHz, and short circuit rated to 10s @ 125°C, VGE = 15V
-
Compared to generation 3, the Generation 4 IGBT design offers tighter parameter dispersion and greater efficiency.
-
For usage in bridge arrangements, IGBT is co-packaged with HEXFREDTM ultrafast, ultrasoft-recovery anti-parallel diodes.
-
TO-252AA packaging, a common size.
IRG4RC10KDTRPBF Applications
Switching applications
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