IRG4RC10KDTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

6.5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Collector Current :

9A

Terminal Form :

Gull wing

Transistor Application :

Motor Control

Switching Energy :

250μJ (on), 140μJ (off)

Power Dissipation :

38W

Packaging :

Tape and Reel (TR)

Td (on/off) @ 25°C :

49ns/97ns

Collector Emitter Saturation Voltage :

2.39V

Number of Elements :

1

Fall Time-Max (tf) :

210ns

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

24ns

Current - Collector Pulsed (Icm) :

18A

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Turn On Time :

78 ns

Gate Charge :

19nC

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Reverse Recovery Time :

28 ns

Base Part Number :

IRG4RC10KDPBF

Height :

1.2446mm

Vce(on) (Max) @ Vge, Ic :

2.62V @ 15V, 5A

Peak Reflow Temperature (Cel) :

260

Input Type :

Standard

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

30

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Additional Feature :

ULTRA FAST SOFT RECOVERY

Collector Emitter Voltage (VCEO) :

2.62V

Gate-Emitter Voltage-Max :

20V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Width :

6.223mm

Radiation Hardening :

No

Max Power Dissipation :

38W

Test Condition :

480V, 5A, 100 Ω, 15V

Weight :

350.003213mg

Mount :

Surface Mount

Length :

6.7056mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

410 ns

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Max Breakdown Voltage :

600V

Factory Lead Time :

13 Weeks

Number of Terminations :

2

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

600V