IRG4RC10KD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

18A

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

20V

JEDEC-95 Code :

TO-252AA

Gate Charge :

19nC

Gate-Emitter Thr Voltage-Max :

6.5V

Switching Energy :

250μJ (on), 140μJ (off)

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.62V @ 15V, 5A

Peak Reflow Temperature (Cel) :

260

Td (on/off) @ 25°C :

49ns/97ns

Reverse Recovery Time :

28ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max (Abs) :

38W

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Current - Collector (Ic) (Max) :

9A

Terminal Form :

Gull wing

Transistor Application :

Motor Control

Fall Time-Max (tf) :

210ns

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Power - Max :

38W

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Elements :

1

Turn Off Time-Nom (toff) :

410 ns

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

78 ns

JESD-30 Code :

R-PSSO-G2

Input Type :

Standard

Additional Feature :

ULTRA FAST SOFT RECOVERY

Published :

2001

Voltage - Collector Emitter Breakdown (Max) :

600V

Test Condition :

480V, 5A, 100 Ω, 15V

Time@Peak Reflow Temperature-Max (s) :

30