IRG4PSH71UDPBF
- Mfr.Part #
- IRG4PSH71UDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- ULTRAFAST COPACK IGBT W/ULTRAFAS
- Stock
- 45,915
- In Stock :
- 45,915
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Polarity/Channel Type :
- N-Channel
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Collector Emitter Voltage (VCEO) :
- 2.7V
- Height :
- 15.24mm
- Factory Lead Time :
- 11 Weeks
- Number of Pins :
- 3
- Turn On Delay Time :
- 46 ns
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 70A
- Current Rating :
- 99A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Additional Feature :
- ULTRA FAST SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Gate-Emitter Voltage-Max :
- 20V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 2.52V
- Turn Off Time-Nom (toff) :
- 810 ns
- Turn-Off Delay Time :
- 350 ns
- Number of Elements :
- 1
- Test Condition :
- 960V, 70A, 5 Ω, 15V
- Width :
- 4.699mm
- Gate Charge :
- 380nC
- Power Dissipation :
- 350W
- Switching Energy :
- 8.8mJ (on), 9.4mJ (off)
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 350W
- Td (on/off) @ 25°C :
- 46ns/250ns
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Rise Time :
- 77ns
- Current - Collector Pulsed (Icm) :
- 200A
- Transistor Application :
- POWER CONTROL
- Package / Case :
- TO-274AA
- Voltage - Rated DC :
- 1.2kV
- Input Type :
- Standard
- Reverse Recovery Time :
- 110 ns
- Published :
- 2004
- Number of Terminations :
- 3
- Turn On Time :
- 121 ns
- Radiation Hardening :
- No
- Gate-Emitter Thr Voltage-Max :
- 6V
- Length :
- 10.5156mm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 99A
- Datasheets
- IRG4PSH71UDPBF

IRG4PSH71UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PSH71UDPBF Description
The IRG4PSH71UDPBF IGBT from Infineon Technologies is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode. The ultrafast switching speed is tuned for operating frequencies ranging from 8 to 40kHz in hard switching and 200kHz in soft switching in resonant mode. Generation 4 IGBTs have tighter parameter distribution and higher efficiency (lower switching and conduction losses) than previous generations.
IRG4PSH71UDPBF Features
-
Optimized for specific application conditions
-
HEXFRED? anti-parallel diode minimizes switching losses and EMI
-
Creepage distance increased to 5.35mm
-
High efficiency
-
Maximum power density
IRG4PSH71UDPBF Applications
-
Alternative Energy
-
Maintenance & Repair
-
Power Management
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