IRG4PSH71UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

RoHS Status :

ROHS3 Compliant

Turn On Time :

121 ns

Turn-Off Delay Time :

350 ns

Max Power Dissipation :

350W

Rise Time :

77ns

Current - Collector Pulsed (Icm) :

200A

Transistor Element Material :

SILICON

Element Configuration :

Single

Reverse Recovery Time :

110 ns

Current Rating :

99A

Td (on/off) @ 25°C :

46ns/250ns

Gate-Emitter Voltage-Max :

20V

Transistor Application :

POWER CONTROL

Max Collector Current :

99A

Turn Off Time-Nom (toff) :

810 ns

Test Condition :

960V, 70A, 5 Ω, 15V

Mount :

Through Hole

Mounting Type :

Through Hole

Package / Case :

TO-274AA

Packaging :

Bulk

Collector Emitter Breakdown Voltage :

1.2kV

ECCN Code :

EAR99

Published :

2004

Switching Energy :

8.8mJ (on), 9.4mJ (off)

Height :

15.24mm

Additional Feature :

ULTRA FAST SWITCHING

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

350W

Width :

4.699mm

Radiation Hardening :

No

Voltage - Rated DC :

1.2kV

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

2.7V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Input Type :

Standard

Turn On Delay Time :

46 ns

Number of Elements :

1

Case Connection :

COLLECTOR

Factory Lead Time :

11 Weeks

Gate-Emitter Thr Voltage-Max :

6V

REACH SVHC :

No SVHC

Number of Terminations :

3

Collector Emitter Saturation Voltage :

2.52V

Gate Charge :

380nC

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Length :

10.5156mm